Boron doped diamond
US7160617B2 · kind B2 · utility
20Cited by
9References
49Claims
0Family size
Inventors
Key dates
| Filing date | Sep 3, 2003 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Sep 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm3, or a combination of such characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.