Insulating film material containing an organic silane compound, its production method and semiconductor device
US7160625B2 · kind B2 · utility
4Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Jan 30, 2003 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Oct 10, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.