Metal-insulator-metal device
US7160745B2 · kind B2 · utility
6Cited by
16References
48Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2004 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Nov 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/00
Abstract
A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.