Capacitive element and method of manufacturing the same
US7161200B2 · kind B2 · utility
3Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2004 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Feb 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5a is composed of a material with the formula (Ba1−y,Sry)mYpTiQO3+δ, where 0<p/(p+m+Q)≦0.015, −0.5<δ<0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.