Structure and method for fabricating semiconductor structures and devices for detecting an object
US7161227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2004 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Oct 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A high quality layer of compound semiconductor material is used to form a source component and a receiver component that are interconnected with an antenna and each other within a semiconducto…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.