Bottom gate-type thin-film transistor and method for manufacturing the same
US7163850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2004 |
| Grant date | Jan 16, 2007 |
| Priority date | — |
| Expiry date | Sep 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper (55) is removed. The ion stopper (55) does not remain in the interlayer insulating film (8) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (55), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (4). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer 4 is 1018 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.