Manufacturing method of semiconductor device and oxidization method of semiconductor substrate
US7163871B2 · kind B2 · utility
2Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2004 |
| Grant date | Jan 16, 2007 |
| Priority date | — |
| Expiry date | Jan 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.