Semiconductor substrate, semiconductor device, and method of manufacturing the same
US7164183B2 · kind B2 · utility
68Cited by
33References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2004 |
| Grant date | Jan 16, 2007 |
| Priority date | — |
| Expiry date | Jan 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress to it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.