Method of manufacturing a thin film transistor
US7166502B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2000 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Nov 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method of manufacturing a thin film transistor, including: preparing a substrate and a mixed solution, the mixed solution having a reductant and a first metal; forming a photoresist pattern on the substrate; etching a portion of the substrate to form a groove using the photoresist pattern as a mask; depositing a second metal on the substrate, a height of the second metal being smaller than a depth of the groove; removing the photoresist pattern on the substrate and the second metal on the photoresist other than in the groove; and forming the first metal on the second metal in the groove by submerging the substrate in the mixed solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.