Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor
US7166689B2 · kind B2 · utility
24Cited by
8References
22Claims
0Family size
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Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Feb 13, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/917
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.