Artificial band gap
US7166786B2 · kind B2 · utility
6Cited by
20References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Sep 15, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/81
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.