Organic semiconductor transistor element, semiconductor device using the same, and process for producing the semiconductor device
US7166859B2 · kind B2 · utility
8Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Jan 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6565
Abstract
The present invention provides an organic semiconductor transistor element that includes at least a source electrode, a drain electrode, an organic semiconductor formed to be electrically conductive to the source electrode and the drain electrode, and a gate electrode which is both insulated from the organic semiconductor and capable of applying an electric field. The organic semiconductor includes a polymer compound containing an aromatic tertiary amine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.