Image sensor with deep well region and method of fabricating the image sensor
US7166878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Oct 28, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
Abstract
An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.