Aluminum alloy film for wiring and sputter target material for forming the film
US7166921B2 · kind B2 · utility
2Cited by
1References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 1, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Nov 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.