Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory
US7167387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2005 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Mar 15, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.