Sense amplifier for reading a cell of a non-volatile memory device
US7167394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2005 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | May 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier for reading a non-volatile memory cell includes a bitline current path connected to a non-volatile memory cell to be read, and a reference current path connected to a reference memory cell. A current mirror includes an input transistor and a corresponding input node, and an output transistor and a corresponding output node. The current mirror converts currents in the reference current path and the bitline current path to respective voltages on the input and output nodes. An equalization circuit equalizes the voltages on the input and output nodes of the current mirror and is activated by a command signal. The equalization circuit includes a switch controlled by the command signal, and a diode-connected load transistor connected in parallel to the output transistor of the current mirror and connected to the output node thereof through the switch. A current steering path draws from the bitline current path a current when enabled by the command signal so that the load transistor establishes a desired voltage on the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.