Radiation-emitting semiconductor component and method for producing the semiconductor component
US7169632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2003 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Oct 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10155
Abstract
A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.