Patent · US Expired

Method of producing a calibration wafer

US7169717B2 · kind B2 · utility

7Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 13, 2003
Grant dateJan 30, 2007
Priority date
Expiry dateNov 13, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/34
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.