Method of producing a calibration wafer
US7169717B2 · kind B2 · utility
7Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2003 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Nov 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.