Fabrication of ultra-shallow channels for microfluidic devices and systems
US7171975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2003 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Sep 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/2224
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for etching an ultra-shallow channel includes using an etch process that is selective for one material to etch a different material in order to achieve a very precise channel depth in the different material. Channels as shallow as 10 nm can be fabricated in silicon with precision of 5 nm or better using the method. Stepped channels can be fabricated where each segment is a different depth, with the segments being between 10 nm and 1000 nm in depth. The method is applied to create a fluidic channel which includes a channel substrate to which is bonded a lid substrate to confine fluids to the fluidic channels so fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.