Zinc oxide crystal growth substrate
US7172813B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 19, 2004 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | May 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.