Patent · US Expired

Semiconductor device with insulating layer having ion-coated nanoparticles

US7173313B2 · kind B2 · utility

1Cited by

3References

3Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Cornelis Reinder Ronda · Aachen, DE
Stefan Peter Grabowski · Neuss, DE

Key dates

Filing date	Mar 8, 2004
Grant date	Feb 6, 2007
Priority date	—
Expiry date	Mar 8, 2024

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/943
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device, which is arranged in a semiconductor body (1), and which comprises at least one source region (4) and at least one drain region (5), each being of the first conductivity type, and at least one body (8) of the second conductivity type, arranged between source region (4) and drain region (5), and at least one gate electrode (10) which is isolated with respect to the semiconductor body (1) via an isolation layer (9). Said isolation layer (9) comprises polarizable particles, which are composed of a nanoparticulate isolating core and a sheath of polarizable anions or polarizable cations. The isolation layer (9) exhibits a high dielectric constant ε.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.