Anti-reflection coatings for semiconductor lasers
US7173953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2003 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Sep 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiNx:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiNx:H whose density approaches the density of crystalline Si3N4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.