Process of producing multicrystalline silicon substrate and solar cell
US7175706B2 · kind B2 · utility
3Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Jun 16, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.