P-type GaAs single crystal and its production method
US7175707B2 · kind B2 · utility
0Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Oct 9, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.