Laser ablation method for fabricating high performance organic devices
US7176053B1 · kind B1 · utility
23Cited by
3References
25Claims
0Family size
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Key dates
| Filing date | Aug 16, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Aug 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A laser ablation method is utilized to define the channel length of an organic transistor. A substrate is coated with a deposition of a metal or conductive polymer deposition, applied in a thin layer in order to enhance the resolution that can be attained by laser ablation. The laser ablation method can be used in a roll-to-roll process, and achieves speeds, volumes, prices and resolutions that are adequate to produce printed electronic technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.