Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
US7176112B2 · kind B2 · utility
3Cited by
7References
23Claims
0Family size
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Key dates
| Filing date | Apr 22, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Apr 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10–25 μm and more particularly 15–18 μm, or a frequency ranging from 12–30 THz and more particularly 16.5–20 THz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.