Method of depositing patterned films of materials using a positive imaging process
US7176114B2 · kind B2 · utility
4Cited by
23References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Sep 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(PriO)2(EAA)2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.