Method of manufacturing semiconductor device
US7176120B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 6, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Aug 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, including the steps of: forming first and second insulation films on a substrate; sequentially forming an organic sacrificing layer and first and second mask layers thereon; forming a wiring groove pattern in the second mask layer; forming a connection hole pattern for forming connection holes in the second and first mask layers and the organic sacrificing layer; forming a wiring groove pattern in the first mask layer and the organic sacrificing layer and forming the connection holes in the second insulation film, by etching conducted by use of the second and first mask layers as an etching mask; and forming the wiring grooves in the second insulation film and forming the connection holes in the second and first insulation films, by use of the first mask layer and the organic sacrificing layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.