Semiconductor device and method for manufacturing the same
US7176509B2 · kind B2 · utility
4Cited by
7References
5Claims
0Family size
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Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Dec 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.