Red/green pixel with simultaneous exposure and improved MTF
US7176544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Aug 31, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A pixel for detecting red and green light is a single pixel is described. The pixel comprises a deep N well formed in a P type epitaxial substrate. The pixel comprises a deep N well formed in a P type epitaxial substrate. A number of P wells, which are used as the sensor nodes, are formed in the deep N well. The use of these P wells as the sensor nodes improves the modulation transfer function. The depth of the deep N well is about equal to the depth of hole electron pairs generated by red light in silicon. The depth of the P wells is about equal to the depth of hole electron pairs generated by green light in silicon. A red/green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells and the deep N well isolated. A green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells isolated and the deep N well held at a fixed positive voltage. A red signal at each P well is determined by subtracting the green signal at that P well from the red/green signal at that P well. Th…
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