Sensor structure and magnetic field sensor
US7176679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2002 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Oct 7, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/09
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and an apparatus of a magnetic field sensor structure are disclosed. The magnetic field sensor structure is formed by a bridge of four magnetoresistors (1–4), wherein each magnetoresistor has a longitudinal direction, and each magnetoresistor (1–4) is polarised by magnets (15–19). Also, each magnet has a main magnetisation field along an axial magnetisation direction, and a magnetic leakage field. The polarisation magnets (15–19) and the magnetoresistors (1–4) are arranged in the form of layers on the same substrate. In one embodiment, the polarisation magnets (15–19) are at the same level as the magnetoresistors (1–4) wherein the polarisation magnets (15–19) have the same main magnetisation direction, which is contained in the plane of the layers. The magnetoresistors have their longitudinal direction parallel with that of the axial direction of the magnets. In one embodiment, two magnetoresistors are arranged in the axial field of magnets and two others are in the magnet leakage field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.