Magnetic memory, and its operating method
US7177179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Sep 25, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.