Two-phase programming of a flash memory
US7177200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Oct 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A datum is stored in a memory by placing a memory cell in a first state that is indicative of the datum, and later placing the same or a different cell in a second state that is indicative of the same datum. If a different cell is placed in the second state, both cells are programmed to store the same number of bits, and then preferably the first cell is erased. Preferably, the first cell is placed in the first state by the application thereto of a first train of voltage pulses until the cell's threshold voltage exceeds a first reference voltage, and the first or second cell is placed in the second state by the application thereto of a second train of voltage pulses until the cell's threshold voltage exceeds a second reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.