Semiconductor laser array with a lattice structure
US7177335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Jul 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The invention includes a semiconductor laser (10) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, an array of waveguide ridges (18) arranged at a distance from the laser layer, and several strip-shaped lattice structures (23) arranged on the flat surface between the waveguide ridges. The lattice structure (23) is formed on an insulating or barrier layer (26) at a distance from the laser layer above the laser layer (13). Processes for the production of such a semiconductor laser are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.