Method and architecture for dual-mode linear and saturated power amplifier operation
US7177370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Jan 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04W52/52
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF transmitter provides both GSM and EDGE capability by implementing collector voltage control over the power transistor(s) in a power amplifier. During EDGE mode, linear base-biasing a power amplifier (PA) allows collector control to provide either saturated mode PA operation (during ramp up/ramp down) or linear mode PA operation (during data burst). Collector control can therefore be used to provide the accurate ramp up and ramp down profiles required for both GSM and EDGE burst output signals, and can also be used to set the level of the constant envelope data burst of a GSM burst output signal, while linear mode PA operation can provide the non-constant envelope EDGE data burst. A variable gain amplifier is used to adjust the input signal to the power amplifier such that the desired transmission level is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.