Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
US7177489B2 · kind B2 · utility
7Cited by
54References
57Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 10, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Aug 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.