Flip-chip light emitting diode device without sub-mount

US7179670B2 · kind B2 · utility

Assignee

• GELcore LLC · US

Inventors

• Bryan Shelton · Bound Brook, US
• Sebastien Libon · Tervuren, BE
• Hari Venugopalan · Somerville, US
• Ivan Eliashevich · Maplewood, US
• Stanton Earl Weaver · Broadalbin, US
• Chen-Lun Hsing Chen · North Olmsted, US
• Thomas F. Soules · Cleveland Heights, US
• Steven Francis LeBoeuf · Raleigh, US
• Stephen Daley Arthur · Glenville, US

Key dates

• Filing date: Mar 5, 2004
• Grant date: Feb 20, 2007
• Expiry date: Apr 20, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).