ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping
US7179677B2 · kind B2 · utility
88Cited by
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11Claims
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Key dates
| Filing date | Sep 3, 2003 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Sep 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.
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