EBIC response enhancement in type III-VI semiconductor material on silicon
US7179678B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Mar 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a type III–VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated to a temperature in the range of 300° C.–600° C. for a period in the range of 20 seconds to 60 minutes in an atmosphere having a composition of 0–10% of hydrogen in nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.