Methods of forming capacitors with high dielectric layers and capacitors so formed
US7179704B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Dec 2, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Jan 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.