Nitride-based light emitting device and method of manufacturing the same
US7180094B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 5, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Jan 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.