Semiconductor device having a gate insulating layer being mainly made of silicon oxynitride (SiON) having a compression strain state as its strain state
US7180143B2 · kind B2 · utility
9Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Aug 4, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Aug 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.