Electrode line structure having fine line width and method of forming the same
US7180190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2003 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.