Semiconductor device and semiconductor wafer
US7180199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2006 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.