Chemical vapor infiltration method for densifying porous substrates having a central passage
US7182980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Jan 30, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Annular substrates (20) are stacked in an enclosure where they define an inside volume (24) and an outer volume (26) outside the stack. A gas containing at least one precursor of a matrix material to be deposited within the pores of the substrates is channeled inside the enclosure to a first one (24) of the two volumes, and a residual gas is extracted from the enclosure from the other one (26) of the volumes. One or more leakage passages (22) allow the volumes to communicate with each other, other than through the substrates. The total section of the leakage passages has a value lying between a minimum value for ensuring that a maximum gas pressure in the first volume is not exceeded until the end of densification, and a maximum value such that a pressure difference is indeed established between the two volumes from the beginning of densification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.