Patent · US Expired

Shadow mask and method for producing a shadow mask

US7183043B2 · kind B2 · utility

6Cited by

5References

15Claims

0Family size

Assignee

Universitat Kassel · DE

Inventors

Jan Meijer · Bochum, DE
Andreas Stephan · Fredenbeck, DE
Ulf Weidenmuller · Bochum, DE
Ivo Rangelow · Kirchbauna, DE

Key dates

Filing date	Aug 14, 2001
Grant date	Feb 27, 2007
Priority date	—
Expiry date	Sep 27, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/20
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 μm to about 200 μm and apertures in the shadow mask have lateral dimensions from about 0.5 μm to about 3 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.