Method of manufacturing semiconductor device
US7183146B2 · kind B2 · utility
12Cited by
6References
61Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Jan 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a method for manufacturing a wiring, a conductive layer, a display device, and a semiconductor device, each of which can meet a large sized substrate and which is manufactured with a higher throughput by using a material efficiently, the conductive layer is formed over the substrate having an insulating surface by discharging the conductive material, and heat treatment is performed by a lamp or a laser beam over the conductive layer. Furthermore, the conductive film is formed under reduced pressure according to the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.