Resist protect oxide structure of sub-micron salicide process
US7183150B2 · kind B2 · utility
1Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Jan 24, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the objectives of the invention a new method is provided for the creation of a layer of a Resistance Protective Oxide (RPO) layer. A layer of ONO is deposited that is to function as the layer of RPO. The deposited layer of ONO is patterned and wet etched, removing the upper or first layer of silicon dioxide. The patterned and etch upper of first layer of silicon dioxide is used as a hardmask to remove the central layer of silicon nitride applying a wet etch. A wet etch is then applied to remove the remaining lower of second layer of silicon dioxide, completing the patterning of the layer of RPO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.