Method of forming a trench for use in manufacturing a semiconductor device
US7183226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Nov 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for use in manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, performing first etching process in which an initial trench is formed using the photoresist pattern as a mask, and performing second distinct etching process to enlarge the initial trench. Thus, the initial trench can be formed using the photoresist pattern having a stable structure. Thereafter, the trench is enlarged using an etching solution having a composition based on the material in which the initial trench is formed, e.g., a silicon substrate or an insulation film. Therefore, a metal wiring, an isolation film or a contact can be formed in the enlarged trench to desired dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.