High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode

US7183575B2 · kind B2 · utility

Assignee

• Nissan Motor Co., Ltd. · JP

Inventors

• Yoshio Shimoida · Yokosuka, JP
• Saichirou Kaneko · Kyoto, JP
• Hideaki Tanaka · Tokyo, JP
• Masakatsu Hoshi · Yokohama, JP
• Kraisom Throngnumchai · Yokohama, JP
• Teruyoshi Mihara · Yokosuka, JP
• Tetsuya Hayashi · Tokyo, JP

Key dates

• Filing date: Feb 19, 2003
• Grant date: Feb 27, 2007
• Expiry date: Feb 19, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.